The HOGE S series memory products are designed and developed specifically for domestic alternative solutions. They adopt the standard DDR4 JEDEC design specifications, carefully select high-quality DDR4 SDRAM memory chips, strictly adapt to domestic CPU architecture platforms, and provide stable, reliable, and high-performance memory technology solutions for innovative applications.
Scope Of Application：Haiguang 3350M platform/Loongson 3A600M platform
| Data bus：64-bit DDR4 Unbuffered Non-ECC | Interface：260PIN SODIMM DDR4 |
| Architecture：1Rx8/2Rx8 | Voltage：VDD = VDDQ = 1.2V ± 60mV |
| Operating Temperature：0℃ to 70℃(Tcase) | Storage temperature：-55℃ to 100℃ |
| Size：69.6 x 30（±0.15mm）x 1.2(±0.1mm) | Compliance：RoHS 2.0 |
| Speed：3200Mbps | CL：22x |
| tCK：0.625ns | Timing：22-22-22 |
| VPP：2.5V | Banks：x8 16 Banks (4 Bank Groups) |
| Address：A0~A16 Max. | ODT：On Die Termination using ODT pin |
| CRC：Cyclic Redundancy Check for Read/Write data security | RoHS：All of Lead-Free products are compliant for RoHS |
HOGE STORAGE: Deeply Rooted in Storage, Leading the Data Future
